| PART |
Description |
Maker |
| H7P1002DL-15 |
Silicon P Channel MOS FETHigh Speed Power Switching
|
Renesas Electronics Corporation
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| TPCS8205 TPC8205 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| TPCF8303 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCF8304 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCS8105 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
